Nanowire-based design incorporates two semiconductors to increase absorption of light.
Department of Energy, Home of Science
Energy and Environmentally friendly Science 6, 1879–1890 (2013)
Manufacturer material with light absorption properties ideally suited for making chemical powers from sunlight was created via a nanowire growth strategy that fused some sort of semiconductors silicon (Si) and gallium arsenide (GaAs) together in a outstanding way. The GaAs nanowire blend increases optical absorption by capturing the incident light and has prospect of high solar energy conversion efficiency.
This valuable research demonstrates that it is possible to Si and GaAs, two semiconductors that optimally absorb a different section of the solar spectrum, to create fresh faces high energy species that can catalyze dissimilar chemical reactions. Such an arrangement may assist the development of a device that generates storable solar fuels by splitting precious water into hydrogen and oxygen the use of fused semiconductors.
The intermittent type of sunlight makes it desirable to maintain solar energy in the form of chemical fuels, for nature accomplishes through photosynthesis. Some of the light-driven electrolysis or "splitting" attached to water can be used to produce hydrogen electricity, a transportable fuel that can be useful without carbon emissions. However , it's been difficult to develop materials that sponge a large portion of the solar pole yet still have sufficient energy to operate a vehicle water electrolysis. To address this obstacle, researchers at the Joint Center relating to Artificial Photosynthesis, an Energy Innovation Centre, and the Center for Energy Nanoscience, an Energy Frontier Research Center, the correct way efforts to grow GaAs nanowires directly on Si substrates. The Si-GaAs nanowire design enables two semiconductors inside optimally absorb different portions of that solar spectrum, creating two type that could potentially produce oxygen along with one semiconductor and hydrogen utilizing other. The sequential stacking of that highly efficient GaAs and Cuando semiconductors produced the light absorption, photovoltage, and high current densities essential for the water-splitting reaction in an synthetic photosynthesis system. This experimental scheme could be used to develop new gizmos incorporating multiple semiconductors to achieve light-driven water electrolysis.
U. S. Area of Energy: Award Numbers SE-SC0004993 (Joint Center for Artificial Photosynthesis, DOE Energy Innovation Hub), DE-SC0001013 (Center for Energy Nanoscience, DOE Force Frontier Research Center), and Native Science Foundation graduate research fellowship under grant no . DGE-1144469.
On hour. Hu, C. Y. Chi, Ok. T. Fountaine, M. Yao, They would. A. Atwater, P. D. Dapkus, N. S. Lewis, and City (c). Zhou, "Optical, electrical, and terreno energy-conversion properties of gallium arsenide nanowire-array photoanodes. " Energy and additionally Environmental Science 6, 1879–1890 (2013). [DOI: 10.1039/c3ee40243f]
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